1 tga4043 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com key features ? frequency range: 40-45 ghz ? 29 dbm nominal pout @ p1db ? 10 db nominal gain ? 0.25 um phemt technology ? bias 7v @ 500 ma ? chip dimensions 3.08 mm x 3.14 x 0.10 mm (0.121 x 0.124 x 0.004 in) primary applications ? point to point radio ? point to multipoint radio ? military communications measured fixtured data bias conditions: vd = 7v, id = 500ma product description the triquint tga4043 is a compact high power amplifier mmic for q-band applications. the part is designed using triquint?s proven standard 0.25 um gate power phemt production process. the tga4043 provides a nominal 28 dbm of output power at 1 db gain compression from 40-45 ghz with a small signal gain of 10 db. the part is ideally suited for low cost emerging markets such as point-to-point radio and point-to-multi point communications. the tga4043 is 100% dc and rf tested on-wafer to ensure performance compliance. q band power amplifier datasheet subject to change without notice
2 tga4043 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 8 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current 960 ma 2/ | i g | gate supply current 56 ma p in input continuous wave power 27 dbm 2 / p d power dissipation 7.5 w 2/, 3 / t ch operating channel temperature 200 c 4 /, 5 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / current is defined under no rf drive conditions. combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / when operated at this power dissipation with a base plate temperature of 70 c, the median life is 7.3e3 hours. 4 / junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ these ratings apply to each individual fet. table ii dc probe test (t a = 25 c, nominal) symbol parameter minimum maximum unit i dss, q1 saturated drain current 40 188 ma g m, q1 transconductance 88 212 ms v p, q1,2, 3-6, 7, 8, 9-12 pinch-off voltage -1.5 -0.5 v v bvgd, q1,2 breakdown voltage gate- drain -30 -8 v v bvgs, q1 breakdown voltage gate- source -30 -8 v
3 tga4043 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii rf characterization table (t a = 25 c, nominal) vd = 7v, id = 500 ma symbol parameter test condition typical limits units gain small signal gain f = 40-45 ghz 10 db irl input return loss f = 40-45 ghz 14.5 db orl output return loss f = 40-45 ghz 12.5 db p 1db output power @ 1db gain compression f = 40-45 ghz 29 dbm
4 tga4043 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv thermal information parameter test conditions t ch (c) jc (c/w) tm (hrs) jc thermal resistance (channel to backside of carrier) vd = 7 v i d = 500 ma pdiss = 3.5 w 130 17.3 5.9 e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
5 tga4043 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured fixtured data bias conditions: vd = 7v, id = 500ma
6 tga4043 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical characteristics gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 0 0 0.128 (0.005) 0.126 (0.005) 0.955 (0.038) 2.672 (0.105) 1.876 (0.074) 0.427 (0.017) 0.806 (0.032) 1.493 (0.059) 2.370 (0.093) 2.520 (0.099) 2.946 (0.116) 3.076 (0.121) 0.806 (0.032) 3.140 (0.124) 0.421 (0.017) 1.493 (0.059) 2.367 (0.093) 2.520 (0.099) 1 23 4 5 6 7 89 10 11 12 bond pad #1 (rf input) bond pad #2 (vg 1) bond pad #3 (vd 1) bond pad #4 (vg 1) bond pad #5 (vd 1) bond pad #6 (bypass) bond pad #7 (rf output) bond pad #8 (bypass) bond pad #9 (vd 2) bond pad #10 (vg 2) bond pad #11 (vd #2) bond pad #12 (vg #2) units: millimeters (inches) thickness: 0.100 (0.004) (reference only) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) gnd is backside of mmic 0.105 x 0.130 (0.004 x 0.005) 0.105 x 0.105 (0.004 x 0.004) 0.105 x 0.105 (0.004 x 0.004) 0.105 x 0.105 (0.004 x 0.004) 0.105 x 0.105 (0.004 x 0.004) 0.105 x 0.105 (0.004 x 0.004) 0.105 x 0.130 (0.004 x 0.005) 0.105 x 0.130 (0.004 x 0.005) 0.105 x 0.105 (0.004 x 0.004) 0.105 x 0.105 (0.004 x 0.004) 0.105 x 0.105 (0.004 x 0.004) 0.105 x 0.105 (0.004 x 0.004)
7 tga4043 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. recommended assembly diagram note: we recommend 1f caps on the bias lines to suppress possible low frequency oscillations. 100pf 100pf 100pf 100pf 0.01 f 0.01 f vd = 7v vg 1 f vg 10 vd = 7v 1 f 10
8 tga4043 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c.
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